Integrated circuit structure with backside dielectric layer having air gap

ABSTRACT

An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. The front-side interconnection structure is on a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. The backside dielectric layer is on a backside of the source epitaxial structure and a backside of the drain epitaxial structure and has an air gap therein. The backside via extends through the backside dielectric layer to a first one of the source epitaxial structure and the drain epitaxial structure.

PRIORITY CLAIM

This application claims the benefit of U.S. Provisional Application No.63/017,141, filed on Apr. 29, 2020, entitled “Backside Air DielectricStructure,” which application is hereby incorporated by reference.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three-dimensional designs, such as amulti-gate field effect transistor (FET), including a fin FET (Fin FET)and a gate-all-around (GAA) FET. In a Fin FET, a gate electrode isadjacent to three side surfaces of a channel region with a gatedielectric layer interposed therebetween. Because the gate structuresurrounds (wraps) the fin on three surfaces, the transistor essentiallyhas three gates controlling the current through the fin or channelregion. Unfortunately, the fourth side, the bottom part of the channelis far away from the gate electrode and thus is not under close gatecontrol. In contrast, in a GAA FET, all side surfaces of the channelregion are surrounded by the gate electrode, which allows for fullerdepletion in the channel region and results in less short-channeleffects due to steeper sub-threshold current swing (SS) and smallerdrain induced barrier lowering (DIBL).

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1C is a flow chart illustrating a method of forming anintegrated circuit structure in accordance with some embodiments.

FIGS. 2, 3, 4, 5A, 6A, 7A and 8A are perspective views of someembodiments of an integrated circuit structure at intermediate stages ofthe method of FIGS. 1A-1C.

FIGS. 5B, 6B, 7B, 8B, 9-13, 14A, 15-25 are cross-sectional views of someembodiments of the integrated circuit structure at intermediate stagesof the method of FIGS. 1A-1C along a first cut.

FIG. 14B is a cross-sectional view of some embodiments of the integratedcircuit structure at intermediate stages of the method of FIGS. 1A-1Calong a second cut.

FIGS. 26-33 are cross sectional views of various stages formanufacturing an integrated circuit structure according to some otherembodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. As used herein,“around,” “about,” “approximately,” or “substantially” shall generallymean within 20 percent, or within 10 percent, or within 5 percent of agiven value or range. Numerical quantities given herein are approximate,meaning that the term “around,” “about,” “approximately,” or“substantially” can be inferred if not expressly stated.

The present disclosure is generally related to integrated circuitstructures and methods of forming the same, and more particularly tofabricating gate-all-around (GAA) transistors with backside vias belowsource regions and/or drain regions of the GAA transistors. It is alsonoted that the present disclosure presents embodiments in the form ofmulti-gate transistors. Multi-gate transistors include those transistorswhose gate structures are formed on at least two-sides of a channelregion. These multi-gate devices may include a p-typemetal-oxide-semiconductor device or an n-type metal-oxide-semiconductordevice. Specific examples may be presented and referred to herein asFINFET, on account of their fin-like structure. Also presented hereinare embodiments of a type of multi-gate transistor referred to as agate-all-around (GAA) device. A GAA device includes any device that hasits gate structure, or portion thereof, formed on 4-sides of a channelregion (e.g., surrounding a portion of a channel region). Devicespresented herein also include embodiments that have channel regionsdisposed in nanosheet channel(s), nanowire channel(s), and/or othersuitable channel configuration. Presented herein are embodiments ofdevices that may have one or more channel regions (e.g., nanosheets)associated with a single, contiguous gate structure. However, one ofordinary skill would recognize that the teaching can apply to a singlechannel (e.g., single nanosheet) or any number of channels. One ofordinary skill may recognize other examples of semiconductor devicesthat may benefit from aspects of the present disclosure.

As scales of the fin width in fin field effect transistors (FinFET)decreases, channel width variations might cause mobility loss. GAAtransistors, such as nanosheet transistors are being studied as analternative to fin field effect transistors. In a nanosheet transistor,the gate of the transistor is made all around the channel (e.g., ananosheet channel or a nanowire channel) such that the channel issurrounded or encapsulated by the gate. Such a transistor has theadvantage of improving the electrostatic control of the channel by thegate, which also mitigates leakage currents.

In order to create more routing space for an integrated circuit (IC)structure having a large number of GAA transistors, backside power railsconnected to backside of source regions of GAA transistors usingbackside metal vias are being studied as an alternative to front-sidepower rails formed on front-side of source regions of transistors.However, resistance capacitance (RC) time delay might be increased dueto shortened distances among the backside metal vias, thereby degradingdevice performance of GAA transistors. Therefore, in some embodiments ofthe present disclosure, a backside interlayer dielectric (ILD) layerhaving one or more air gaps is formed around the backside metal vias.One advantageous feature having the air gaps is that air in the air gapexhibits a relative permittivity (or called dielectric constant)approximately equal to 1. Such a low dielectric constant helps to reducethe capacitive coupling between adjacent backside vias. Such reducedcapacitive coupling may help to improve reliability characteristics.

Illustrated in FIGS. 1A-1C is a method M1 of semiconductor fabricationincluding fabrication of an integrated circuit structure havingmulti-gate devices. As used herein, the term “multi-gate device” is usedto describe a device (e.g., a semiconductor transistor) that has atleast some gate material disposed on multiple sides of at least onechannel of the device. In some examples, the multi-gate device may bereferred to as a GAA device or a nanosheet device having gate materialdisposed on at least four sides of at least one channel of the device.The channel region may be referred to as a “nanowire,” which as usedherein includes channel regions of various geometries (e.g.,cylindrical, bar-shaped) and various dimensions.

FIGS. 2, 3, 4, 5A, 6A, 7A and 8A are perspective views of someembodiments of an integrated circuit structure 100 at intermediatestages of the method M1 of FIGS. 1A-1C. FIGS. 5B, 6B, 7B, 8B, 9-13, 14A,15-25 are cross-sectional views of some embodiments of the integratedcircuit structure 100 at intermediate stages of the method M1 along afirst cut (e.g., cut X-X in FIG. 5A), which is along a lengthwisedirection of the channel and perpendicular to a top surface of thesubstrate. FIG. 14B is a cross-sectional view of some embodiments of theintegrated circuit structure 100 at intermediate stages of the method M1along a second cut (e.g., cut Y-Y in FIG. 5A), which is in the gateregion and perpendicular to the lengthwise direction of the channel.

As with the other method embodiments and exemplary devices discussedherein, it is understood that parts of the integrated circuit structure100 may be fabricated by a CMOS technology process flow, and thus someprocesses are only briefly described herein. Further, the exemplaryintegrated circuit structure may include various other devices andfeatures, such as other types of devices such as additional transistors,bipolar junction transistors, resistors, capacitors, inductors, diodes,fuses, static random access memory (SRAM) and/or other logic circuits,etc., but is simplified for a better understanding of the concepts ofthe present disclosure. In some embodiments, the exemplary integratedcircuit structure includes a plurality of semiconductor devices (e.g.,transistors), including PFETs, NFETs, etc., which may be interconnected.Moreover, it is noted that the process steps of method M1, including anydescriptions given with reference to FIGS. 2-25, as with the remainderof the method and exemplary figures provided in this disclosure, aremerely exemplary and are not intended to be limiting beyond what isspecifically recited in the claims that follow.

Referring to FIG. 1A, the method M1 begins at step S101 where one ormore epitaxial layers are grown on a substrate. Referring to the exampleof FIG. 2, in some embodiments of step S101, an epitaxial stack 120 isformed over the substrate 110. In some embodiments, the substrate 110may include silicon (Si). Alternatively, the substrate 110 may includegermanium (Ge), silicon germanium (SiGe), a III-V material (e.g., GaAs,GaP, GaAsP, AlInAs, AlGaAs, GaInAs, InAs, GaInP, InP, InSb, and/orGaInAsP; or a combination thereof) or other appropriate semiconductormaterials. In some embodiments, the substrate 110 may include asemiconductor-on-insulator (SOI) structure such as a buried dielectriclayer. Also alternatively, the substrate 110 may include a burieddielectric layer such as a buried oxide (BOX) layer, such as that formedby a method referred to as separation by implantation of oxygen (SIMOX)technology, wafer bonding, SEG, or another appropriate method.

The epitaxial stack 120 includes epitaxial layers 122 of a firstcomposition interposed by epitaxial layers 124 of a second composition.The first and second compositions can be different. In some embodiments,the epitaxial layers 122 are SiGe and the epitaxial layers 124 aresilicon (Si). However, other embodiments are possible including thosethat provide for a first composition and a second composition havingdifferent oxidation rates and/or etch selectivity. In some embodiments,the epitaxial layers 122 include SiGe and where the epitaxial layers 124include Si, the Si oxidation rate of the epitaxial layers 124 is lessthan the SiGe oxidation rate of the epitaxial layers 122.

The epitaxial layers 124 or portions thereof may form nanosheetchannel(s) of the multi-gate transistor. The term nanosheet is usedherein to designate any material portion with nanoscale, or evenmicroscale dimensions, and having an elongate shape, regardless of thecross-sectional shape of this portion. Thus, this term designates bothcircular and substantially circular cross-section elongate materialportions, and beam or bar-shaped material portions including for examplea cylindrical in shape or substantially rectangular cross-section. Theuse of the epitaxial layers 124 to define a channel or channels of adevice is further discussed below.

It is noted that three layers of the epitaxial layers 122 and threelayers of the epitaxial layers 124 are alternately arranged asillustrated in FIG. 2, which is for illustrative purposes only and notintended to be limiting beyond what is specifically recited in theclaims. It can be appreciated that any number of epitaxial layers can beformed in the epitaxial stack 120; the number of layers depending on thedesired number of channels regions for the transistor. In someembodiments, the number of epitaxial layers 124 is between 2 and 10.

In some embodiments, each epitaxial layer 122 has a thickness rangingfrom about 1 nanometers (nm) to about 10 nm, but other ranges are withinthe scope of various embodiments of the present disclosure. Theepitaxial layers 122 may be substantially uniform in thickness. In someembodiments, each epitaxial layer 124 has a thickness ranging from about1 nm to about 10 nm, but other ranges are within the scope of variousembodiments of the present disclosure. In some embodiments, theepitaxial layers 124 of the stack are substantially uniform inthickness. As described in more detail below, the epitaxial layers 124may serve as channel region(s) for a subsequently-formed multi-gatedevice and the thickness is chosen based on device performanceconsiderations. The epitaxial layers 122 in channel regions(s) mayeventually be removed and serve to define a vertical distance betweenadjacent channel region(s) for a subsequently-formed multi-gate deviceand the thickness is chosen based on device performance considerations.Accordingly, the epitaxial layers 122 may also be referred to assacrificial layers, and epitaxial layers 124 may also be referred to aschannel layers.

By way of example, epitaxial growth of the layers of the stack 120 maybe performed by a molecular beam epitaxy (MBE) process, a metalorganicchemical vapor deposition (MOCVD) process, and/or other suitableepitaxial growth processes. In some embodiments, the epitaxially grownlayers such as, the epitaxial layers 124 include the same material asthe substrate 110. In some embodiments, the epitaxially grown layers 122and 124 include a different material than the substrate 110. As statedabove, in at least some examples, the epitaxial layers 122 include anepitaxially grown silicon germanium (SiGe) layer and the epitaxiallayers 124 include an epitaxially grown silicon (Si) layer.Alternatively, in some embodiments, either of the epitaxial layers 122and 124 may include other materials such as germanium, a compoundsemiconductor such as silicon carbide, gallium arsenide, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide,an alloy semiconductor such as SiGe, GaAsP, AlInAs, AlGaAs, InGaAs,GaInP, and/or GaInAsP, or combinations thereof. As discussed, thematerials of the epitaxial layers 122 and 124 may be chosen based onproviding differing oxidation and/or etching selectivity properties. Insome embodiments, the epitaxial layers 122 and 124 are substantiallydopant-free (i.e., having an extrinsic dopant concentration from about 0cm⁻³ to about 1×10¹⁸ cm⁻³), where for example, no intentional doping isperformed during the epitaxial growth process.

The method M1 then proceeds to step S102 where semiconductor fins areformed by patterning. With reference to the example of FIG. 3, in someembodiments of block S102, a plurality of semiconductor fins 130extending from the substrate 110 are formed. In various embodiments,each of the fins 130 includes a substrate portion 112 formed from thesubstrate 110 and portions of each of the epitaxial layers of theepitaxial stack including epitaxial layers 122 and 124. The fins 130 maybe fabricated using suitable processes including double-patterning ormulti-patterning processes. Generally, double-patterning ormulti-patterning processes combine photolithography and self-alignedprocesses, allowing patterns to be created that have, for example,pitches smaller than what is otherwise obtainable using a single, directphotolithography process. For example, in one embodiment, a sacrificiallayer is formed over a substrate and patterned using a photolithographyprocess. Spacers are formed alongside the patterned sacrificial layerusing a self-aligned process. The sacrificial layer is then removed, andthe remaining spacers, or mandrels, may then be used to pattern the fins130 by etching initial epitaxial stack 120. The etching process caninclude dry etching, wet etching, reactive ion etching (RIE), and/orother suitable processes.

In the illustrated embodiment as illustrated in FIGS. 2 and 3, a hardmask (HM) layer 910 is formed over the epitaxial stack 120 prior topatterning the fins 130. In some embodiments, the HM layer includes anoxide layer 912 (e.g., a pad oxide layer that may include SiO₂) and anitride layer 914 (e.g., a pad nitride layer that may include Si₃N₄)formed over the oxide layer. The oxide layer 912 may act as an adhesionlayer between the epitaxial stack 120 and the nitride layer 914 and mayact as an etch stop layer for etching the nitride layer 914. In someexamples, the HM oxide layer 912 includes thermally grown oxide,chemical vapor deposition (CVD)-deposited oxide, and/or atomic layerdeposition (ALD)-deposited oxide. In some embodiments, the HM nitridelayer 914 is deposited on the HM oxide layer 912 by CVD and/or othersuitable techniques.

The fins 130 may subsequently be fabricated using suitable processesincluding photolithography and etch processes. The photolithographyprocess may include forming a photoresist layer (not shown) over the HMlayer 910, exposing the photoresist to a pattern, performingpost-exposure bake processes, and developing the resist to form apatterned mask including the resist. In some embodiments, patterning theresist to form the patterned mask element may be performed using anelectron beam (e-beam) lithography process or an extreme ultraviolet(EUV) lithography process using light in EUV region, having a wavelengthof, for example, about 1-100 nm. The patterned mask may then be used toprotect regions of the substrate 110, and layers formed thereupon, whilean etch process forms trenches 102 in unprotected regions through the HMlayer 910, through the epitaxial stack 120, and into the substrate 110,thereby leaving the plurality of extending fins 130. The trenches 102may be etched using a dry etch (e.g., reactive ion etching), a wet etch,and/or combination thereof. Numerous other embodiments of methods toform the fins on the substrate may also be used including, for example,defining the fin region (e.g., by mask or isolation regions) andepitaxially growing the epitaxial stack 120 in the form of the fins 130.

Referring to FIGS. 1A and 4, the method M1 proceeds to step S103 byforming shallow trench isolation (STI) features 140 interposing the fins130. By way of example and not limitation, a dielectric layer is firstdeposited over the substrate 110, filling the trenches 102 with thedielectric material. In some embodiments, the dielectric layer mayinclude silicon oxide, silicon nitride, silicon oxynitride,fluorine-doped silicate glass (FSG), a low-k dielectric, combinationsthereof, and/or other suitable materials. In various examples, thedielectric layer may be deposited by a CVD process, a subatmospheric CVD(SACVD) process, a flowable CVD process, an ALD process, a physicalvapor deposition (PVD) process, and/or other suitable process. In someembodiments, after deposition of the dielectric layer, the integratedcircuit structure 100 may be annealed, for example, to improve thequality of the dielectric layer. In some embodiments, the dielectriclayer (and subsequently formed STI features 140) may include amulti-layer structure, for example, having one or more liner layers.

In some embodiments of forming the isolation (STI) features, afterdeposition of the dielectric layer, the deposited dielectric material isthinned and planarized, for example by a chemical mechanical polishing(CMP) process. In some embodiments, the HM layer 910 (as illustratedFIG. 3) functions as a CMP stop layer. The STI features 140 interposingthe fins 130 are recessed. Referring to the example of FIG. 4, the STIfeatures 140 are recessed providing the fins 130 extending above the STIfeatures 140. In some embodiments, the recessing process may include adry etching process, a wet etching process, and/or a combinationthereof. The HM layer 910 may also be removed before, during, and/orafter the recessing of the STI features 140. The nitride layer 914 ofthe HM layer 910 may be removed, for example, by a wet etching processusing H₃PO₄ or other suitable etchants. In some embodiments, the oxidelayer 912 of the HM layer 910 is removed by the same etchant used torecess the STI features 140. In some embodiments, a recessing depth iscontrolled (e.g., by controlling an etching time) so as to result in adesired height of the exposed upper portion of the fins 130. In theillustrated embodiment, the desired height exposes each of the layers ofthe epitaxial stack 120 in the fins 130.

The method M1 then proceeds to step S104 where sacrificiallayers/features are formed and in particular, a dummy gate structure.While the present discussion is directed to a replacement gate processwhereby a dummy gate structure is formed and subsequently replaced,other configurations may be possible.

With reference to FIGS. 5A and 5B, a gate structure 150 is formed. Insome embodiments, the gate structure 150 is a dummy (sacrificial) gatestructure that is subsequently removed. Thus, in some embodiments usinga gate-last process, the gate structure 150 is a dummy gate structureand will be replaced by the final gate structure at a subsequentprocessing stage of the integrated circuit structure 100. In particular,the dummy gate structure 150 may be replaced at a later processing stageby a high-k dielectric layer (HK) and metal gate electrode (MG) asdiscussed below. In some embodiments, the dummy gate structure 150 isformed over the substrate 110 and is at least partially disposed overthe fins 130. The portion of the fins 130 underlying the dummy gatestructure 150 may be referred to as the channel region. The dummy gatestructure 150 may also define a source/drain (S/D) region of the fins130, for example, the regions of the fin 130 adjacent and on opposingsides of the channel region.

In the illustrated embodiment, step S104 first forms a dummy gatedielectric layer 152 over the fins 130. In some embodiments, the dummygate dielectric layer 152 may include SiO₂, silicon nitride, a high-kdielectric material and/or other suitable material. In various examples,the dummy gate dielectric layer 152 may be deposited by a CVD process, asubatmospheric CVD (SACVD) process, a flowable CVD process, an ALDprocess, a PVD process, or other suitable process. By way of example,the dummy gate dielectric layer 152 may be used to prevent damages tothe fins 130 by subsequent processes (e.g., subsequent formation of thedummy gate structure). Subsequently, step S104 forms other portions ofthe dummy gate structure 150, including a dummy gate electrode layer 154and a hard mask which may include multiple layers 156 and 158 (e.g., anoxide layer 156 and a nitride layer 158). In some embodiments, the dummygate structure 150 is formed by various process steps such as layerdeposition, patterning, etching, as well as other suitable processingsteps. Exemplary layer deposition processes include CVD (including bothlow-pressure CVD and plasma-enhanced CVD), PVD, ALD, thermal oxidation,e-beam evaporation, or other suitable deposition techniques, orcombinations thereof. In forming the gate structure for example, thepatterning process includes a lithography process (e.g.,photolithography or e-beam lithography) which may further includephotoresist coating (e.g., spin-on coating), soft baking, mask aligning,exposure, post-exposure baking, photoresist developing, rinsing, drying(e.g., spin-drying and/or hard baking), other suitable lithographytechniques, and/or combinations thereof. In some embodiments, theetching process may include dry etching (e.g., RIE etching), wetetching, and/or other etching methods. In some embodiments, the dummygate electrode layer 154 may include polycrystalline silicon(polysilicon). In some embodiments, the hard mask includes an oxidelayer 156 such as a pad oxide layer that may include SiO₂, and a nitridelayer 158 such as a pad nitride layer that may include Si₃N₄ and/orsilicon oxynitride. In some embodiments, after patterning the dummy gateelectrode layer 154, the dummy gate dielectric layer 152 is removed fromthe S/D regions of the fins 130. The etch process may include a wetetch, a dry etch, and/or a combination thereof. The etch process ischosen to selectively etch the dummy gate dielectric layer 152 withoutsubstantially etching the fins 130, the dummy gate electrode layer 154,the oxide layer 156 and the nitride layer 158.

Referring to FIG. 1A, the method M1 then proceeds to step S105 wheregate spacers are formed on sidewalls of the dummy gate structures. Asillustrated in FIGS. 5A and 5B, in some embodiments of step S105, aspacer material layer is deposited on the substrate. The spacer materiallayer may be a conformal layer that is subsequently etched back to formgate sidewall spacers. In the illustrated embodiment, a spacer materiallayer 160 is disposed conformally on top and sidewalls of the dummy gatestructure 150. The spacer material layer 150 may include a dielectricmaterial such as silicon oxide, silicon nitride, silicon carbide,silicon oxynitride, SiCN films, silicon oxycarbide, SiOCN films, and/orcombinations thereof. In some embodiments, the spacer material layer 160includes multiple layers, such as a first spacer layer 162 and a secondspacer layer 164 (illustrated in FIG. 5B) formed over the first spacerlayer 162. By way of example, the spacer material layer 160 may beformed by depositing a dielectric material over the gate structure 150using processes such as, CVD process, a subatmospheric CVD (SACVD)process, a flowable CVD process, an ALD process, a PVD process, or othersuitable process. An anisotropic etching process is then performed onthe deposited spacer material layer 160 to expose portions of the fins130 not covered by the dummy gate structure 150 (e.g., in source/drainregions of the fins 130). Portions of the spacer material layer directlyabove the dummy gate structure 150 may be completely removed by thisanisotropic etching process. Portions of the spacer material layer onsidewalls of the dummy gate structure 150 may remain, forming gatesidewall spacers, which is denoted as the gate spacers 160, for the sakeof simplicity. It is noted that although the gate spacers 160 aremulti-layer structures in the cross-sectional view of FIG. 5B, they areillustrated as single-layer structures in the perspective view of FIG.5A for the sake of simplicity.

Referring to FIG. 1A, the method M1 then proceeds to step S106 whereexposed portions of the fins are removed. With reference to FIGS. 6A and6B, in some embodiments of step S106, exposed portions of thesemiconductor fins 130 that extend laterally beyond the gate spacers 160(e.g., in source/drain regions of the fins 130) are etched by using, forexample, an anisotropic etching process that uses the dummy gatestructure 150 and the gate spacers 160 as an etch mask, resulting inrecesses R1 into the semiconductor fins 130 and between correspondingdummy gate structures 150. After the anisotropic etching, end surfacesof the sacrificial layers 122 and channel layers 124 are aligned withrespective outermost sidewalls of the gate spacers 160, due to theanisotropic etching. In some embodiments, the anisotropic etching may beperformed by a dry chemical etch with a plasma source and a reactiongas. The plasma source may be an inductively coupled plasma (ICR)source, a transformer coupled plasma (TCP) source, an electron cyclotronresonance (ECR) source or the like, and the reaction gas may be, forexample, a fluorine-based gas (such as SF₆, CH₂F₂, CH₃F, CHF₃, or thelike), chloride-based gas (e.g., Cl₂), hydrogen bromide gas (HBr),oxygen gas (O₂), the like, or combinations thereof.

Referring to FIG. 1A, the method M1 then proceeds to step S107 where thesacrificial layers 122 are laterally recessed. With reference to FIGS.7A and 7B, in some embodiments of step S107, the sacrificial layers 122are laterally or horizontally recessed by using suitable etchtechniques, resulting in lateral recesses R2 each vertically betweencorresponding channel layers 124. Step S107 may be performed by using aselective etching process. By way of example and not limitation, thesacrificial layers 122 are SiGe and the channel layers 124 are siliconallowing for the selective etching of the sacrificial layers 122. Insome embodiments, the selective wet etching includes an APM etch (e.g.,ammonia hydroxide-hydrogen peroxide-water mixture) that etches SiGe at afaster etch rate than it etches Si. In some embodiments, the selectiveetching includes SiGe oxidation followed by a SiGeO_(x) removal. Forexample, the oxidation may be provided by O₃ clean and then SiGeO_(x)removed by an etchant such as NH₄OH that selectively etches SiGeO_(x) ata faster etch rate than it etches Si. Moreover, because oxidation rateof Si is much lower (sometimes 30 times lower) than oxidation rate ofSiGe, the channel layers 124 is not significantly etched by the processof laterally recessing the sacrificial layers 122. As a result, thechannel layers 124 laterally extend past opposite end surfaces of thesacrificial layers 122.

Referring to FIG. 1A, the method M1 then proceeds to step S108 where theinner spacers are formed on opposite end surfaces of the laterallyrecessed sacrificial layers. As illustrated in FIGS. 8A and 8B, in someembodiments of step S108, an inner spacer material layer 170 is formedto fill the recesses R2 left by the lateral etching of the sacrificiallayers 122 discussed above with reference to FIGS. 7A and 7B. The innerspacer material layer 170 may be a low-K dielectric material, such asSiO₂, SiN, SiCN, or SiOCN, and may be formed by a suitable depositionmethod, such as ALD. After the deposition of the inner spacer materiallayer 170, an anisotropic etching process may be performed to trim thedeposited inner spacer material 170, such that only portions of thedeposited inner spacer material 170 that fill the recesses R2 left bythe lateral etching of the sacrificial layers 122 are left. After thetrimming process, the remaining portions of the deposited inner spacermaterial are denoted as inner spacers 170, for the sake of simplicity.The inner spacers 170 serve to isolate metal gates from source/drainregions formed in subsequent processing. In the example of FIGS. 8A and8B, sidewalls of the inner spacers 170 are aligned with sidewalls of thechannel layers 124.

Referring to FIG. 1A, the method M1 then proceeds to step S109 wheresource regions of the fins are further recessed. With reference to FIG.9, in some embodiments of step S109, a patterned mask P1 is first formedto cover drain regions D of the fins 130 but not cover source regions Sof the fins 130, and then the source regions S of the fins 130 arerecessed, resulting in source-region recesses R3 in the semiconductorfins 130. In some embodiments, the patterned mask P1 may be aphotoresist mask formed by suitable photolithography process. Forexample, the photolithography process may include spin-on coating aphotoresist layer over the structure as illustrated in FIGS. 8A and 8B,performing post-exposure bake processes, and developing the photoresistlayer to form the patterned mask P1. In some embodiments, patterning theresist to form the patterned mask element may be performed using anelectron beam (e-beam) lithography process or an extreme ultraviolet(EUV) lithography process.

Once the patterned mask P1 is formed, the source-region recesses R3 canbe formed in the source regions S using, for example, an anisotropicetching process. In some embodiments, the anisotropic etching may beperformed by a dry chemical etch with a plasma source and a reactiongas. By way of example and not limitation, the plasma source may be aninductively coupled plasma (ICR) source, a transformer coupled plasma(TCP) source, an electron cyclotron resonance (ECR) source or the like,and the reaction gas may be a fluorine-based gas (such as SF₆, CH₂F₂,CH₃F, CHF₃, or the like), chloride-based gas (e.g., Cl₂), hydrogenbromide gas (HBr), oxygen gas (O₂), the like, or combinations thereof.

The source-region recesses R3 has a depth T3 that is deep enough toallow air gaps formed in a subsequently formed backside ILD layer, aswill be discussed in greater detail below. Stated differently, thedeeper the source-region recesses R3, the easier the formation of airgaps in backside ILD layer. As a result, the depth T3 of thesource-region recesses R3 is selected to allow for air gap formation insubsequent processing. By way of example, the depth T3 of thesource-region recesses R3 is in a range from about 30 nm to about 100nm. If the depth T3 of the source-region recesses R3 is excessivelysmall, then the air gap (e.g., air gap 272 illustrated in FIG. 21) maynot be formed well due to gap height of the subsequently formed gap G4(as illustrated in FIG. 20) in z-direction is not enough. If the depthT3 of the source-region recesses R3 is excessively large, then theequivalent k value (i.e., dielectric constant) in the subsequentlyformed backside ILD layer 270 (as illustrated in FIG. 21) may not be aslow because the air space in the backside ILD layer 270 is not enough.However, other ranges of the depth T3 of the source-region recesses R3are within the scope of various embodiments of the present disclosure,as long as air gaps can be formed in the backside ILD layer. Moreover,the shorter the lateral distance D3 between the source-region recessesR3, the easier the formation of air gaps in backside ILD layer. As aresult, the lateral distance D3 between the source-region recesses R3 isselected to allow for air gap formation in subsequent processing. By wayof example, the lateral distance D3 between the source-region recessesR3 is in a range from about 50 nm to about 100 nm. If the lateraldistance D3 between the source-region recesses R3 is excessively small,then the equivalent dielectric constant in the subsequent formedbackside ILD layer 270 (as illustrated in FIG. 21) will be not lowenough, because the air space may be too small, which results from earlymerging of deposited dielectric during the deposition of the backsideILD layer 270. If the lateral distance D3 between the source-regionrecesses R3 is excessively large, then the air gap 272 (as illustratedin FIG. 21) will not be formed well. However, other ranges of thelateral distance D3 between the source-region recesses R3 are within thescope of various embodiments of the present disclosure, as long as airgaps can be formed in the backside ILD layer.

The etching time/duration for forming the source-region recesses R3 isselected to allow the depth T3 of source-region recesses R3 meeting atarget value with in the range as discussed above. By way of example andnot limitation, the etching time/duration for forming the source-regionrecesses R3 is in a range from about 30 seconds to about 300 seconds. Ifthe etching time/duration for forming the source-region recesses R3 isexcessively short, the depth T3 of the source-region recesses R3 may beinsufficient to allow air gap formation in backside ILD layer. If theetching time/duration for forming the source-region recesses R3 isexcessively long, the depth T3 of the source-region recesses R3 may betoo deep, such that the equivalent dielectric constant in thesubsequently formed backside ILD layer 270 may be not low enough becausethe air space in the backside ILD layer 270 is not enough.

In some embodiments as illustrated in FIG. 9, the source-region recessesR3 may have sidewalls laterally offset from outermost sidewalls of theinner spacers 170. This is because of shadowing effect resulting fromdirecting etchant ions into the deep recesses R1 between dummy gatestructures 150. However, in some other embodiments, sidewalls of thesource-region recesses R3 may be aligned with outermost sidewalls of theinner spacers 170.

Referring to FIG. 1B, the method M1 then proceeds to step S110 wheresacrificial epitaxial plugs are formed in the respective source-regionrecesses. With reference to FIG. 10, in some embodiments of step S110,with the patterned mask P1 in place, an epitaxial growth process isperformed to grow an epitaxial material in the source-region recesses Runtil the epitaxial material builds up sacrificial epitaxial plugs 180filling the source-region recesses R3. The epitaxial material has adifferent composition than the substrate 110, thus resulting indifferent etch selectivity between the sacrificial epitaxial plugs 180and the substrate 110. For example, the substrate 110 is Si and thesacrificial epitaxial plugs 180 are SiGe. In some embodiments, thesacrificial epitaxial plugs 180 are SiGe free from p-type dopants (e.g.,boron) and n-type dopants (e.g., phosphorous), because the sacrificialepitaxial plugs 180 will be removed in subsequent processing and notserve as source terminals of transistors in a final IC product. In someembodiments, the sacrificial epitaxial plugs 180 each have a first SiGelayer 182 and a second SiGe layer 184 over the first SiGe layer 182. Thefirst and second SiGe layers 182 and 184 are different at least ingermanium atomic percentage (Ge %), which in turn allows for differentetch selectivity between the first and second SiGe layers 182 and 184.In certain embodiments, the first SiGe layer 182 has a higher germaniumatomic percentage than the second SiGe layer 184. By way of example andnot limitation, the germanium atomic percentage in the first SiGe layer182 is in a range from about 20% to about 50%, and the germanium atomicpercentage in the second SiGe layer 184 is in a range from about 5% toabout 20%. Once formation of the sacrificial epitaxial plugs 180 iscomplete, the patterned mask P1 is removed by, for example, ashing.

In order to prevent SiGe from being inadvertently formed on end surfacesof the Si channel layers 124, the SiGe plugs 180 can be grown in abottom-up fashion, in accordance with some embodiments of the presentdisclosure. By way of example and not limitation, the SiGe plugs 180 canbe grown by an epitaxial deposition/partial etch process, which repeatsthe epitaxial deposition/partial etch process at least once. Suchrepeated deposition/partial etch process is also called a cyclicdeposition-etch (CDE) process. In some embodiments, these SiGe plugs 180are grown by selective epitaxial growth (SEG), where an etching gas isadded to promote the selective growth of silicon germanium from thebottom surface of the source-region recesses R3 that has a first crystalplane, but not from the vertical end surfaces of the channel layers 124that have a second crystal plane different from the first crystal plane.For example, the SiGe plugs 180 are epitaxially grown using reactiongases such as HCl as an etching gas, GeH₄ as a Ge precursor gas, DCSand/or SiH₄ as a Si precursor gas, H₂ and/or N₂ as a carrier gas. Insome embodiments, the etching gas may be other chlorine-containing gasesor bromine-containing gases such as Cl₂, BCl₃, BiCl₃, BiBr₃ or the like.

SiGe deposition conditions are controlled (e.g., by tuning flow rateratio among Ge precursor gas, Si precursor gas and carrier gas) in sucha way that SiGe growth rate on the bottom surfaces of the source-regionrecesses R3 is faster than SiGe growth rate on the vertical end surfacesof the channel layers 124, because the bottom surfaces of thesource-region recesses R3 and the vertical end surfaces of the channellayers 124 have different crystal orientation planes. Accordingly, theSiGe deposition step incorporating the etching step promotes bottom-upSiGe growth. For example, SiGe is grown from the bottom surface of thesource-region recesses R3 at a faster rate than that from the endsurfaces of the channel layers 124. The etching gas etches SiGe grownfrom the end surfaces of the channel layers 124 as well as SiGe grownfrom the bottom surface of the source-region recesses R3 at comparableetch rates. However, since the SiGe growth rate from the bottom surfacesof the source-region recesses R3 is faster than from the end surfaces ofthe channel layers 124, the net effect is that SiGe will substantiallygrow from the bottom surfaces of source-region recesses R3 in thebottom-up fashion. By way of example and not limitation, in eachdeposition-etch cycle of the CDE process, the etching step stops oncethe end surfaces of the channel layers 124 are exposed, and the SiGegrown from the bottom surfaces of the source-region recesses R3 remainsin the source-region recesses R3 because it is thicker than the SiGegrown from the end surfaces of the channel layers 124. In this way, thebottom-up growth can be realized. The CDE process as discussed above ismerely one example to explain how to form SiGe plugs 180 insource-region recesses R3 but absent from end surfaces of Si channellayers 124, and other suitable techniques may also be used to form theSiGe plugs 180.

To achieve different germanium atomic percentages in the first andsecond SiGe layers 182 and 184, a ratio of a flow rate of the Geprecursor gas (e.g., GeH₄) to a flow rate of the Si precursor gas (e.g.,SiH₄) is varied for their respective growth processes. For example, aGe-to-Si precursor flow rate ratio during the epitaxial growth of thefirst SiGe layer 182 is greater than that of the second SiGe layer 184.In this way, the germanium atomic percentage of the first SiGe layer 182is greater than that of the second SiGe layer 184.

Referring to FIG. 1B, the method M1 then proceeds to step S111 wheresource epitaxial structures are formed over the sacrificial epitaxialplugs, and drain epitaxial structures are formed over drain regions ofthe fins. Referring to the example of FIG. 11, in some embodiments ofstep S111, source epitaxial structures 190S are formed over therespective sacrificial epitaxial plugs 180, and drain epitaxialstructures 190D are formed over the drain regions D of the semiconductorfins 130. The source/drain epitaxial structures 190S/190D may be formedby performing an epitaxial growth process that provides an epitaxialmaterial on the sacrificial epitaxial plugs 180 and the fins 130. Duringthe epitaxial growth process, the dummy gate structures 150 and gatesidewall spacers 160 limit the source/drain epitaxial structures190S/190D to the source/drain regions S/D. Suitable epitaxial processesinclude CVD deposition techniques (e.g., vapor-phase epitaxy (VPE)and/or ultra-high vacuum CVD (UHV-CVD)), molecular beam epitaxy, and/orother suitable processes. The epitaxial growth process may use gaseousand/or liquid precursors, which interact with the composition ofsemiconductor materials of the fins 130, the sacrificial epitaxial plugs180 and the channel layers 124.

In some embodiments, the source/drain epitaxial structures 190S/190D mayinclude Ge, Si, GaAs, AlGaAs, SiGe, GaAsP, SiP, or other suitablematerial. The source/drain epitaxial structures 190S/190D may be in-situdoped during the epitaxial process by introducing doping speciesincluding: p-type dopants, such as boron or BF₂; n-type dopants, such asphosphorus or arsenic; and/or other suitable dopants includingcombinations thereof. If the source/drain epitaxial structures 190S/190Dare not in-situ doped, an implantation process (i.e., a junction implantprocess) is performed to dope the source/drain epitaxial structures190S/190D. In some exemplary embodiments, the source/drain epitaxialstructures 190S/190D in an NFET device include SiP, while those in aPFET device include GeSnB and/or SiGeSnB.

In some embodiments, the source/drain epitaxial structures 190S/190Deach include a first epitaxial layer 192 and a second epitaxial layer194 over the first epitaxial layer 192. The first and second epitaxiallayers 192 and 194 may be different at least in germanium atomicpercentage (Ge %) or phosphorus concentration (P %). In the depictedembodiment, the first epitaxial layer 192 may be not only grown from topsurfaces of the sacrificial epitaxial plugs 180 and the fins 130, butalso grown from end surfaces of the channel layers 124. This is becauseformation of the source/drain epitaxial structures 190S/190D does notrequire the bottom-up approach as discussed previously with respect tosacrificial epitaxial plugs 180.

In some embodiments where the source/drain epitaxial structures190S/190D include GeSnB and/or SiGeSnB for forming PFETs, the first andsecond epitaxial layers 192 and 194 are different at least in germaniumatomic percentage (Ge %). In certain embodiments, the first SiGe layer192 has a lower germanium atomic percentage than the second SiGe layer194. Low germanium atomic percentage in the first SiGe layer 192 helpsin reducing Schottky barrier with the un-doped Si in the fins 13 o. Highgermanium atomic percentage in the second SiGe layer 194 helps inreducing source/drain contact resistance. By way of example and notlimitation, the germanium atomic percentage in the first SiGe layer 192is in a range from about 5% to about 20%, and the germanium atomicpercentage in the second SiGe layer 194 is in a range from about 30% toabout 50%. In some embodiments, the second SiGe layer 194 may have agradient germanium atomic percentage. For example, the germanium atomicpercentage in the second SiGe layer 194 increases as a distance from thefirst SiGe layer 192 increases.

In some embodiments where the source/drain epitaxial structures190S/190D include SiP for forming NFETs, the first and second SiP layers192 and 194 are different at least in phosphorous concentration (P %).In certain embodiments, the first SiP layer 192 has a lower phosphorousconcentration than the second SiP layer 194. Low phosphorousconcentration in the first SiP layer 192 helps in reducing Schottkybarrier with the un-doped Si in the fins 130. High phosphorousconcentration in the second SiP layer 194 helps in reducing source/draincontact resistance. By way of example and not limitation, thephosphorous concentration in the first SiP layer 192 is in a range fromabout 10% to about 30%, and the phosphorous concentration in the secondSiP layer 194 is in a range from about 20% to about 60%. In someembodiments, the second SiP layer 194 may have a gradient phosphorousconcentration. For example, the phosphorous concentration in the secondSiP layer 194 increases as a distance from the first SiP layer 192increases.

Once the source/drain epitaxial structures 190S/190D are formed, anannealing process can be performed to activate the p-type dopants orn-type dopants in the source/drain epitaxial structures 190S/190D. Theannealing process may be, for example, a rapid thermal anneal (RTA), alaser anneal, a millisecond thermal annealing (MSA) process or the like.

Referring to FIGS. 1B and 12, the method M1 then proceeds to step S112where a front-side ILD layer 210 is formed on the substrate 110. The ILDlayer 210 is referred to a “front-side” ILD layer in this contextbecause it is formed on a front-side of the multi-gate transistors(i.e., a side of the multi-gate transistors that gates protrude fromsource/drain regions 190S/190D). In some embodiments, a contact etchstop layer (CESL) 200 is also formed prior to forming the ILD layer 210.In some examples, the CESL includes a silicon nitride layer, siliconoxide layer, a silicon oxynitride layer, and/or other suitable materialshaving a different etch selectivity than the front-side ILD layer 210.The CESL may be formed by plasma-enhanced chemical vapor deposition(PECVD) process and/or other suitable deposition or oxidation processes.In some embodiments, the front-side ILD layer 210 includes materialssuch as tetraethylorthosilicate (TEOS) oxide, un-doped silicate glass,or doped silicon oxide such as borophosphosilicate glass (BPSG), fusedsilica glass (FSG), phosphosilicate glass (PSG), boron doped siliconglass (BSG), and/or other suitable dielectric materials having adifferent etch selectivity than the CESL 200. The front-side ILD layer210 may be deposited by a PECVD process or other suitable depositiontechnique. In some embodiments, after formation of the front-side ILDlayer 210, the integrated circuit structure 100 may be subject to a highthermal budget process to anneal the front-side ILD layer 210.

In some examples, after depositing the front-side ILD layer, aplanarization process may be performed to remove excessive materials ofthe front-side ILD layer. For example, a planarization process includesa chemical mechanical planarization (CMP) process which removes portionsof the front-side ILD layer 210 (and CESL layer, if present) overlyingthe dummy gate structures 150 and planarizes a top surface of theintegrated circuit structure 100. In some embodiments, the CMP processalso removes hard mask layers 156, 158 (as shown in FIG. 11) and exposesthe dummy gate electrode layer 154.

Referring to FIG. 1B, the method M1 then proceeds to step S113 wheredummy gate structures 150 (as shown in FIG. 12) are removed first, andthen the sacrificial layers 122 are removed. The resulting structure isillustrated in FIG. 13. In the illustrated embodiments, step S113 firstremoves the dummy gate structures 150 by using a selective etchingprocess (e.g., selective dry etching, selective wet etching, or acombination thereof) that etches the materials in dummy gate structures150 at a faster etch rate than it etches other materials (e.g., gatesidewall spacers 16 o, CESL 200 and/or front-side ILD layer 210), thusresulting in gate trenches GT1 between corresponding gate sidewallspacers 160, with the sacrificial layers 122 exposed in the gatetrenches GT1. Subsequently, step S113 removes the sacrificial layers 122in the gate trenches GT1 by using another selective etching process thatetches the sacrificial layers 122 at a faster etch rate than it etchesthe channel layers 124, thus forming openings O1 between neighboringchannel layers 124. In this way, the channel layers 124 becomenanosheets suspended over the substrate no and between the source/drainepitaxial structures 190S/190D. This step is also called a channelrelease process. At this interim processing step, the openings O1between nanosheets 124 may be filled with ambient environment conditions(e.g., air, nitrogen, etc). In some embodiments, the nanosheets 124 canbe interchangeably referred to as nanowires, nanoslabs and nanorings,depending on their geometry. For example, in some other embodiments thechannel layers 124 may be trimmed to have a substantial rounded shape(i.e., cylindrical) due to the selective etching process for completelyremoving the sacrificial layers 122. In that case, the resultant channellayers 124 can be called nanowires.

In some embodiments, the sacrificial layers 122 are removed by using aselective wet etching process. In some embodiments, the sacrificiallayers 122 are SiGe and the channel layers 124 are silicon allowing forthe selective removal of the sacrificial layers 122. In someembodiments, the selective wet etching includes an APM etch (e.g.,ammonia hydroxide-hydrogen peroxide-water mixture). In some embodiments,the selective removal includes SiGe oxidation followed by a SiGeO_(x)removal. For example, the oxidation may be provided by O₃ clean and thenSiGeO_(x) removed by an etchant such as NH₄OH that selectively etchesSiGeO_(x) at a faster etch rate than it etches Si. Moreover, becauseoxidation rate of Si is much lower (sometimes 30 times lower) thanoxidation rate of SiGe, the channel layers 124 may not be significantlyetched by the channel release process. It can be noted that both thechannel release step and the previous step of laterally recessingsacrificial layers (i.e., step S107) use a selective etching processthat etches SiGe at a faster etch rate than etching Si, and thereforethese two steps may use the same etchant chemistry in some embodiments.In this case, the etching time/duration of channel release step islonger than the etching time/duration of the previous step of laterallyrecessing sacrificial layers, so as to completely remove the sacrificialSiGe layers.

Referring to FIG. 1B and FIGS. 14A, 14B, the method M1 then proceeds tostep S114 where replacement gate structures 220 are respectively formedin the gate trenches GT1 to surround each of the nanosheets 124suspended in the gate trenches GT1. The gate structure 220 may be thefinal gate of a GAA FET. The final gate structure may be a high-k/metalgate stack, however other compositions are possible. In someembodiments, each of the gate structures 220 forms the gate associatedwith the multi-channels provided by the plurality of nanosheets 124. Forexample, high-k/metal gate structures 220 are formed within the openingsO1 (as illustrated in FIG. 13) provided by the release of nanosheets124. In various embodiments, the high-k/metal gate structure 220includes a gate dielectric layer 222 formed around the nanosheets 124, awork function metal layer 224 formed around the gate dielectric layer222, and a fill metal 226 formed around the work function metal layer224 and filling a remainder of gate trenches GT1. The gate dielectriclayer 222 includes an interfacial layer (e.g., silicon oxide layer) anda high-k gate dielectric layer over the interfacial layer. High-k gatedielectrics, as used and described herein, include dielectric materialshaving a high dielectric constant, for example, greater than that ofthermal silicon oxide (˜3.9). The work function metal layer 224 and/orfill metal layer 226 used within high-k/metal gate structures 220 mayinclude a metal, metal alloy, or metal silicide. Formation of thehigh-k/metal gate structures 220 may include depositions to form variousgate materials, one or more liner layers, and one or more CMP processesto remove excessive gate materials. As illustrated in a cross-sectionalview of FIG. 14B that is taken along a longitudinal axis of ahigh-k/metal gate structure 220, the high-k/metal gate structure 220surrounds each of the nanosheets 124, and thus is referred to as a gateof a GAA FET.

In some embodiments, the interfacial layer of the gate dielectric layer222 may include a dielectric material such as silicon oxide (SiO₂),HfSiO, or silicon oxynitride (SiON). The interfacial layer may be formedby chemical oxidation, thermal oxidation, atomic layer deposition (ALD),chemical vapor deposition (CVD), and/or other suitable method. Thehigh-k dielectric layer of the gate dielectric layer 222 may includehafnium oxide (HfO₂). Alternatively, the gate dielectric layer 222 mayinclude other high-k dielectrics, such as hafnium silicon oxide (HfSiO),hafnium silicon oxynitride (HfSiON), hafnium tantalum oxide (HfTaO),hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO),lanthanum oxide (LaO), zirconium oxide (ZrO), titanium oxide (TiO),tantalum oxide (Ta₂O₅), yttrium oxide (Y₂O₃), strontium titanium oxide(SrTiO₃, STO), barium titanium oxide (BaTiO₃, BTO), barium zirconiumoxide (BaZrO), hafnium lanthanum oxide (HfLaO), lanthanum silicon oxide(LaSiO), aluminum silicon oxide (AlSiO), aluminum oxide (Al₂O₃), siliconnitride (Si₃N₄), oxynitrides (SiON), and combinations thereof.

The work function metal layer 224 may include work function metals toprovide a suitable work function for the high-k/metal gate structures220. For an n-type GAA FET, the work function metal layer 224 mayinclude one or more n-type work function metals (N-metal). The n-typework function metals may exemplarily include, but are not limited to,titanium aluminide (TiAl), titanium aluminium nitride (TiAlN),carbo-nitride tantalum (TaCN), hafnium (Hf), zirconium (Zr), titanium(Ti), tantalum (Ta), aluminum (Al), metal carbides (e.g., hafniumcarbide (HfC), zirconium carbide (ZrC), titanium carbide (TiC), aluminumcarbide (AlC)), aluminides, and/or other suitable materials. On theother hand, for a p-type GAA FET, the work function metal layer 224 mayinclude one or more p-type work function metals (P-metal). The p-typework function metals may exemplarily include, but are not limited to,titanium nitride (TiN), tungsten nitride (WN), tungsten (W), ruthenium(Ru), palladium (Pd), platinum (Pt), cobalt (Co), nickel (Ni),conductive metal oxides, and/or other suitable materials.

In some embodiments, the fill metal 226 may exemplarily include, but arenot limited to, tungsten, aluminum, copper, nickel, cobalt, titanium,tantalum, titanium nitride, tantalum nitride, nickel silicide, cobaltsilicide, TaC, TaSiN, TaCN, TiAl, TiAlN, or other suitable materials.

Referring the FIG. 1B, the method M1 then proceeds to step S115 where adrain contact is formed over the drain epitaxial structure. Withreference to FIG. 15, in some embodiments, step S115 first forms a draincontact opening through the front-side ILD layer 210 and the CESL 200 toexpose the drain epitaxial structure 190D by using suitablephotolithography and etching techniques. Subsequently, step S115 forms adrain silicide region 230 on the front side of the drain epitaxialstructure 190D by using a silicidation process, followed by forming adrain contact 240 over the drain silicide region 230. Silicidation maybe formed by depositing a metal layer (e.g., nickel layer or cobaltlayer) over the exposed drain epitaxial structure 190D, annealing themetal layer such that the metal layer reacts with silicon (and germaniumif present) in the drain epitaxial structure 190D to form the metalsilicide region 230 (e.g., nickel silicide or cobalt silicide), andthereafter removing the non-reacted metal layer. Drain contact 240 maybe formed by depositing one or more metal materials (e.g., tungsten,cobalt, copper, the like or combinations thereof) to fill the draincontact hole by using suitable deposition techniques (e.g., CVD, PVD,ALD, the like or combinations thereof), followed by a CMP process toremove excess metal materials outside the drain contact opening.

Referring the FIGS. 1B and 16, the method M1 then proceeds to step S116where a front-side multilayer interconnection (MLI) structure 250 isformed over the substrate 110. The front-side MLI structure 250 maycomprises a plurality of front-side metallization layers 252. The numberof front-side metallization layers 252 may vary according to designspecifications of the integrated circuit structure 100. Only twofront-side metallization layers 252 are illustrated in FIG. 16 for thesake of simplicity. The front-side metallization layers 252 eachcomprise a first front-side inter-metal dielectric (IMD) layer 253 and asecond front-side IMD layer 254. The second front-side IMD layers 254are formed over the corresponding first front-side IMD layers 253. Thefront-side metallization layers 252 comprise one or more horizontalinterconnects, such as front-side metal lines 255, respectivelyextending horizontally or laterally in the second front-side IMD layers254 and vertical interconnects, such as front-side conductive vias 256,respectively extending vertically in the first front-side IMD layers253.

In some embodiments, a front-side conductive via 256 in a bottommostfront-side metallization layer 252 is in contact with the gate structure220 to make electrical connection to the gate structure 220, and afront-side conductive via 256 in the bottommost front-side metallizationlayer 252 is in contact with the drain contact 240 to make electricalconnection to the drain epitaxial structure 190D.

The front-side metal lines 255 and front-side metal vias 256 can beformed using, for example, a single damascene process, a dual damasceneprocess, the like, or combinations thereof. In some embodiments, thefront-side IMD layers 253-254 may include low-k dielectric materialshaving k values, for example, lower than about 4.0 or even 2.0 disposedbetween such conductive features. In some embodiments, the front-sideIMD layers may be made of, for example, phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), fluorosilicate glass (FSG),SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon oxide, siliconoxynitride, combinations thereof, or the like, formed by any suitablemethod, such as spin-on coating, chemical vapor deposition (CVD),plasma-enhanced CVD (PECVD), or the like. The front-side metal lines andvias 255 and 256 may comprise metal materials such as copper, aluminum,tungsten, combinations thereof, or the like. In some embodiments, thefront-side metal lines and vias 255 and 256 may further comprise one ormore barrier/adhesion layers (not shown) to protect the respectivefront-side IMD layers 253-254 from metal diffusion (e.g., copperdiffusion) and metallic poisoning. The one or more barrier/adhesionlayers may comprise titanium, titanium nitride, tantalum, tantalumnitride, or the like, and may be formed using physical vapor deposition(PVD), CVD, ALD, or the like.

Referring to FIG. 1B and FIG. 17, the method M1 then proceeds to stepS117 where a carrier substrate 260 is bonded to the front-side MLIstructure 250 in accordance with some embodiments of the presentdisclosure. The carrier substrate 260 may be silicon, doped or undoped,or may include other semiconductor materials, such as germanium; acompound semiconductor; or combinations thereof. The carrier substrate260 may provide a structural support during subsequent processing onbackside of the integrated circuit structure 100 and may remain in thefinal product in some embodiments. In some other embodiments, thecarrier substrate 260 may be removed after the subsequent processing onbackside of integrated circuit structure 100 is complete. In someembodiments, the carrier substrate 260 is bonded to a topmost dielectriclayer of the front-side MLI structure 250 by, for example, fusionbonding. Afterwards, the integrated circuit structure 100 is flippedupside down, such that a backside surface of the substrate no facesupwards, as illustrated in FIG. 18.

Referring to FIGS. 1B and 19, the method M1 then proceeds to step S118where the substrate 110 is thinned down to expose the sacrificialepitaxial plugs 180. In some embodiments, thinning is accomplished by aCMP process, a grinding process, or the like.

Referring to FIG. 1B, the method M1 then proceeds to step S119 where thesubstrate 110 is removed. With reference to FIG. 20, in some embodimentsof step S119, the Si substrate 110 is removed by using a selectiveetching process that etches Si at a faster etch rate that it etches theSiGe plugs 180. In some embodiments, the selective etching process forselectively removing the Si substrate 110 may be a wet etching processusing an wet etching solution such as tetramethylammonium hydroxide(TMAH), potassium hydroxide (KOH), NH₄OH, the like or combinationsthereof.

As a result of the selective etching process, the sacrificial epitaxialplugs 180 protrude from backsides of the source epitaxial structure 190Sby a protruding height H4, and are separated from each other by alateral distance D4. Because the sacrificial epitaxial plugs 180 inheritthe geometry of source-region recesses R3 (as illustrated in FIG. 9),the protruding height H4 of the sacrificial epitaxial plugs 180 issubstantially the same as the depth T3 of the source-region recesses R3,and the lateral distance D4 between the sacrificial epitaxial plugs 180is also the same as the lateral distance D3 between the source-regionrecesses R3. By way of example and not by limitation, the protrudingheight H4 of the sacrificial epitaxial plugs 180 is in a range fromabout 30 nm to about 100 nm, and the lateral distance D4 between thesacrificial epitaxial plugs 180 is in a range from about 50 nm to about100 nm.

Referring to FIG. 1C, the method M1 then proceeds to step S120 where abackside ILD layer with one or more air gaps is formed around thesacrificial epitaxial plugs 180. Reference is made to FIG. 21, in someembodiments, step S120 first deposits a dielectric material of backsideILD layer 270 over the sacrificial epitaxial plugs 180 by using suitabledeposition techniques such as a conform deposition technique like CVD.Subsequently, step S120 thins down the deposited dielectric material byusing, for example, an etch back process, a CMP process or the like,until the sacrificial epitaxial plugs 180 are exposed from the backsideILD layer 270. The ILD layer 270 is referred to as a “backside” ILDlayer in this context because it is formed on a backside of themulti-gate transistors opposite to the front-side of the multi-gatetransistors that replacement gates 220 protrude from source/drainregions 190S/190D.

Depositing dielectric material into a narrow gap G4 (as indicated inFIG. 20) between the sacrificial epitaxial plugs 180 results in one ormore air gaps 272 (i.e., gaps filled with air) in the resultant backsideILD layer 270 due to the high aspect ratio (i.e., the ratio of gapheight (i.e., protruding height H4 of sacrificial epitaxial plugs 180)to gap width (i.e., lateral distance D4 between sacrificial epitaxialplugs)) of the gap G4 between the sacrificial epitaxial plugs 180. Ingreater detail, the high aspect ratio of the gap G4 between thesacrificial epitaxial plugs 180 may result in overhangs 271 (asillustrated in FIG. 20) formed in an upper portion of the gap G4 betweenthe sacrificial epitaxial plugs 180 during the conformal depositionprocess. Such overhangs 271 may prevent the backside ILD layer 270 fromcompletely filling the gap G4 between the sacrificial epitaxial plugs180, so that the air gap 272 is left and sealed in the resultantbackside ILD layer 270 as shown in FIG. 21. In some embodiments, theconformal deposition process is plasma-free deposition, such as athermal CVD process or the like. This is because plasma used in adeposition process (e.g., high-density plasma (HDP) CVD) might result insputter etch during the deposition, which in turn might inhibitoverhangs 271 formed on the upper portion of the gap G4 between thesacrificial epitaxial plugs 18 o, which in turn might inhibit formationof air gap 272 in the backside ILD layer 270.

In some embodiments as depicted in FIG. 21, the air gap 272 may have atapered profile with a width decreasing as a distance from the drainepitaxial structure 190D increases. This is because that the formationof overhangs begins from the upper portion of the gap G4 between thesacrificial epitaxial plugs 180. However, it is noted that the shapeshown in FIG. 21 is selected purely for demonstration purposes and arenot intended to limit the various embodiments of the present disclosure.For example, it is within the scope and spirit of the present disclosurefor the air gap 272 to comprise other shapes, such as, but no limited torectangle, oval, square, trapezoidal, triangle and/or the like. In somaembodiments, the air gap 272 may overlap the drain epitaxial structure190D because formation of the overhangs begin from upper portions of thesacrificial epitaxial plugs 180 extending from the source epitaxialstructures 190S.

In some embodiments, the backside ILD layer 270 includes materials suchas tetraethylorthosilicate (TEOS) oxide, un-doped silicate glass, ordoped silicon oxide such as borophosphosilicate glass (BPSG), fusedsilica glass (FSG), phosphosilicate glass (PSG), boron doped siliconglass (BSG), and/or other suitable dielectric materials. In someembodiments, the backside ILD layer 270 has a same material as thefront-side ILD layer 210.

Referring to FIGS. 1C and 22, the method M1 then proceeds to step S121where the sacrificial epitaxial plugs 180 are removed to form backsidevia openings O5 extending through the backside ILD layer 270 to exposebacksides of the source epitaxial structures 190S. In some embodimentsof step S121, the sacrificial epitaxial plugs 180 are removed by using aselective etching process that etches SiGe of the sacrificial epitaxialplugs 180 at a faster etch rate than it etches the dielectric materialof the backside ILD layer 270. Stated another way, the selective etchingprocess uses an etchant that attacks SiGe, and hardly attacks thebackside ILD layer 270. Therefore, after the selective etching processis complete, the air gap 272 remains sealed in the backside ILD 270. Byway of example and not limitation, the sacrificial epitaxial plugs 180are removed by a selective wet etching such as an APM etch (e.g.,ammonia hydroxide-hydrogen peroxide-water mixture) that selectivelyetches SiGe at a faster etch rate than it etches dielectric materials.

As discussed previously, the second SiGe layer 184 has a lower germaniumatomic concentration than the first SiGe layer 182, thus allowing fordifferent etch selectivity between the first and second SiGe layers 182and 184. As a result, in some embodiments the SiGe selective etchingprocess can etch the second SiGe layer 184 at a slower etch rate than itetching the first SiGe layer 182. Therefore, the second SiGe layer 184can slow down the SiGe selective etching process and thus acts as adetectable etch end point in the SiGe selective etching process, so asto prevent the source epitaxial structures 190S from being attacked bythe SiGe selective etching process. In this way, the source epitaxialstructures 190S may remain substantially intact after the SiGe selectiveetching process in some embodiments of the present disclosure. In someother embodiments, backsides of the source epitaxial structures 190S arerecessed due to the SiGe selective etching process. In that case, thefirst epitaxial layers 192 of the source epitaxial structures 190S atbottoms of the backside via openings O5 may be etched through, such thatthe second epitaxial layers 194 (which have higher Ge % or P % than thefirst epitaxial layers 192) may be exposed at the bottoms of thebackside via openings O5.

Referring to FIG. 1C, the method M1 then proceeds to step S122 where ametal material layer of backside vias is formed in the backsideopenings. With reference to FIG. 23, in some embodiments, step S122first forms a source silicide region 280 on the backside of each of thesource epitaxial structures 190S by using a silicidation process,followed by depositing a metal material layer 290 over the sourcesilicide region 280. Silicidation may be performed by depositing a metallayer (e.g., nickel layer or cobalt layer) over the exposed backsides ofsource epitaxial structures 190S, annealing the metal layer such thatthe metal layer reacts with silicon (and germanium if present) in thesource epitaxial structures 190S to form the metal silicide region 280(e.g., nickel silicide or cobalt silicide), and thereafter removing thenon-reacted metal layer. Once formation of the source silicide regions280 is complete, one or more metal materials (tungsten, cobalt, copper,the like or combinations thereof) are deposited to form a metal materiellayer 290 overfilling the backside via openings O5 by using suitabledeposition techniques (e.g., CVD, PVD, ALD, the like or combinationsthereof).

Referring to FIGS. 1C and 24, the method M1 then proceeds to step S123where the metal material layer 290 is thinned down to form backside vias292 in the backside via openings O5. In some embodiments of step S123, aCMP process is performed to thin down the metal material layer 290 (asillustrated in FIG. 23) until the backside ILD layer 270 is exposed,while leaving separate portions of the metal material 290 in thebackside via openings O5 to serve as backside vias 292. In someembodiments, the CMP process uses high-selectivity slurry (HSS) that hashigh removal selectivity between the metal material 290 and thedielectric material of backside ILD layer 270 so that determination ofpolishing end point is made clearer. More particularly, in the CMPprocess using HSS, the metal material 290 has a faster removal rate (RR)than the dielectric material of the backside ILD layer 270, so that thebackside ILD layer 270 can slow down or even stop the CMP process, andthus the backside ILD layer 270 acts as a detectable polishing end pointin the CMP process. In this way, the backside ILD layer 270 can remainsubstantially intact after the CMP process, so that the air gap 272remains sealed in the backside ILD layer 270. Because air in the sealedair gap 272 exhibits a relative permittivity (or called dielectricconstant) approximately equal to 1, the capacitive coupling betweenadjacent backside vias 292 can be reduced to decrease the RC time delay,which in turn improves operation speed of the integrated circuit 100. Insome embodiments, HSS used in this CMP process includes, by way ofexample and not limitation, aluminum oxide, potassium hydroxide, malonicacid, ferric nitrate, de-ionized water, or combinations thereof.

Referring to FIG. 1C and FIG. 25, the method M1 then proceeds to stepS124 where a backside MLI structure 300 is formed over the backside vias292 and the backside ILD layer 270. The backside MLI structure 30 o maycomprise a bottommost backside metallization layer 301 and a pluralityof upper backside metallization layers 302 over the bottommost backsidemetallization layer 301. The number of upper backside metallizationlayers 302 may vary according to design specifications of the integratedcircuit structure 100. Only two backside metallization layers 302 (alsocalled backside M1 layer and backside M2 layer) are illustrated in FIG.25 for the sake of simplicity.

The bottommost backside metallization layer 301 (also called backside M0layer) comprises a backside IMD layer 303 over the backside ILD layer270 and one or more horizontal interconnects, such as backside metallines 305, respectively extending horizontally or lateralling in thebackside IMD layer 303. A metal line 305 in the bottommost backsidemetallization layer 301 is a power rail that extends across and is incontact with one or more source backside vias 292, so as to makeelectrical connection to one or more source epitaxial structures 190S.Because the power rail is formed in the backside MLI structure 300, morerouting space can be provided for the integrated circuit structure 100.

The backside metallization layers (e.g., backside M1 layer and M2 layer)302 each comprise a first backside inter-metal dielectric (IMD) layer304 and a second backside IMD layer 306. The second backside IMD layers306 are formed over the corresponding first backside IMD layers 304. Thebackside metallization layers 302 comprise one or more horizontalinterconnects, such as backside metal lines 307, respectively extendinghorizontally or laterally in the second backside IMD layers 306 andvertical interconnects, such as backside vias 308, respectivelyextending vertically in the first backside IMD layers 304.

In some embodiments, the backside vias 308 have tapered profile (asindicated in dash lines) with a width decreasing as a distance from thebackside ILD layer 270 decreases, due to the nature of etching viaopenings in the backside IMD layers 304 after the IC structure 100 isflipped upside down. Moreover, the backside vias 292 have taperedprofile with a width decreasing as a distance from the source epitaxialstructures 190S increases, due to the nature of etching source-regionrecesses R3 (as illustrated in FIG. 9) before the IC structure 100 isflipped upside down. Therefore, the backside vias 292 narrow in adirection opposite to a direction in which the backside vias 308 narrow.More specifically, the backside vias 292 narrow in a direction towardsthe backside MLI structure 300, and the backside vias 308 narrow in adirection towards the front-side MLI structure 250.

FIGS. 26-33 illustrate exemplary cross sectional views of various stagesfor manufacturing an integrated circuit structure 100′ according to someother embodiments of the present disclosure. It is understood thatadditional operations can be provided before, during, and afterprocesses shown by FIGS. 26-33, and some of the operations describedbelow can be replaced or eliminated, for additional embodiments of themethod. The order of the operations/processes may be interchangeable.The same or similar configurations, materials, processes and/oroperation as described with FIGS. 2-25 may be employed in the followingembodiments, and the detailed explanation may be omitted.

After the structure as shown in FIG. 19 is formed, the substrate 110 isetched back such that upper portions of the sacrificial epitaxial plugs180 protrude from the etched back substrate 110 a. The resultingstructure is illustrated in FIG. 26. In some embodiments, the Sisubstrate 110 is etched back by using a selective etching process thatetches Si at a faster etch rate that it etches the SiGe plugs 180. Insome embodiments, the selective etching process for selectively removingthe Si substrate 110 may be a wet etching process using an wet etchingsolution such as tetramethylammonium hydroxide (TMAH), potassiumhydroxide (KOH), NH₄OH, the like or combinations thereof. The etchingtime/duration is controlled such that a lower portion 110 a of the Sisubstrate 110 remains around the sacrificial epitaxial plugs 180 afterthe etching back is complete.

Next, sacrificial epitaxial caps 400 are formed on the protrudingportions of the sacrificial epitaxial plugs 180. The resulting structureis illustrated in FIG. 27. In some embodiments, the sacrificialepitaxial caps 400 are SiGe free from p-type dopants (e.g., boron) andn-type dopants (e.g., phosphorous), because the sacrificial epitaxialcaps 400 will be removed in subsequent processing and not serve assource terminals of transistors in a final IC product. A combinedstructure of a sacrificial epitaxial cap 400 and a sacrificial epitaxialplug 180 may be hammer-shaped in a cross-sectional view, and is thus bereferred to as a sacrificial hammer-shaped via 409 that will be replacedwith a hammer-shaped backside via in subsequent processing. In someembodiments, the sacrificial SiGe caps 400 has a higher germanium atomicconcentration than the second SiGe layer 184 of the sacrificial SiGeplugs 180, which in turn allows for etching the SiGe caps 400 at afaster etch rate than etching the second SiGe layer 184 in subsequentbackside via opening etching. By way of example and not limitation, thegermanium atomic percentage in the sacrificial SiGe caps 400 is in arange from about 20% to about 50%. In some embodiments, the sacrificialSiGe caps 400 have a comparable germanium atomic percentage to that ofthe first SiGe layer 182 of the sacrificial SiGe plugs 180, because thefirst SiGe layer 182 does not serve as an etch end point in subsequentbackside via opening etching.

Due to different growth rates on different crystal planes of thedifferent surfaces of the sacrificial epitaxial plugs 180, the growth ofsacrificial epitaxial caps 400 comprises lateral growth and verticalgrowth. Facets are hence formed as being the surfaces of sacrificialcaps 400. By way of example and not limitation, in the cross-sectionalview of FIG. 27, the sacrificial epitaxial caps 400 each havehammer-head profile or an octagonal profile that comprises a horizontalfacet 401 at its top, a pair of up-slant facets 402 facing away from thesubstrate 110 a and extending at an angle from opposite sides of thehorizontal facet 401, a pair of vertical facets 403 respectivelyextending from bottom edges of the pair of up-slant facets 402, and apair of down-slant facets 404 facing the substrate 110 a andrespectively extending at an angle from bottom edges of the pair ofvertical facets 403. The lateral growth of sacrificial epitaxial caps400 reduces the lateral distance D6 of the gap G6 between thesacrificial hammer-shaped vias 409, and the vertical growth of thesacrificial epitaxial caps 400 increases a height H6 of the sacrificialhammer-shaped via 409. As a result, the sacrificial epitaxial caps 400can increases the aspect ratio of the gap G6 between the sacrificialhammer-shaped vias 409, which in turn helps in air gap formation insubsequently formed backside ILD layer.

In some embodiments, the sacrificial epitaxial caps 400 can be grown byan epitaxial deposition/partial etch process, which repeats theepitaxial deposition/partial etch process at least once. Such repeateddeposition/partial etch process is also called a cyclic deposition-etch(CDE) process that includes one or more repetitions of a deposition stepand an etch step. For example, the CDE process may perform a depositionstep followed by an etch step, and then repeats the deposition andcleaning steps. In some exemplary embodiments where the sacrificialepitaxial caps 400 are SiGe, the SiGe caps 400 can be epitaxially grownusing reaction gases such as HCl as an etching gas, GeH₄ as a Geprecursor gas, DCS and/or SiH₄ as a Si precursor gas, H₂ and/or N₂ as acarrier gas. In some embodiments, the etching gas may be otherchlorine-containing gases or bromine-containing gases such as Cl₂, BCl₃,BiCl₃, BiBr₃ or the like.

SiGe deposition conditions can be controlled (e.g., by tuning flow rateratio among Ge precursor gas, Si precursor gas and carrier gas) in sucha way that SiGe growth rate on surfaces of the SiGe plugs 180 is fasterthan SiGe growth rate on the backside surface of the etched back Sisubstrate 110 a, because the surfaces of the SiGe plugs 180 havedifferent crystal orientation planes than the backside surface of theetched back Si substrate 110 a. Moreover, the etching gas etches SiGegrown from the etched back Si substrate 110 a at an etch rate comparableto it etches SiGe grown from the SiGe plugs 180. The net effect of theCDE process is that SiGe caps 400 will selectively grow from the SiGeplugs 180, while leaving the backside surface of the Si substrate 110 aexposed. By way of example and not limitation, in each deposition-etchcycle of the CDE process, the etching step stops once the backsidesurface of the Si substrate 110 a is exposed, while the SiGe grown fromthe SiGe plugs 180 remains on the SiGe plugs 180 because it is thickerthan the SiGe grown from the backside surface of the Si substrate 110 a.

The CDE process as discussed above is merely one example to explain howto form SiGe caps 400 on the SiGe plugs 180 but absent from the backsidesurface of the Si substrate 110 a, and other suitable techniques mayalso be used to form the SiGe caps 400. For example, in some otherembodiments, a patterned mask (e.g., oxide mask) may be formed over thebackside surface of the Si substrate 110 a prior to forming the SiGecaps 400, so that the patterned mask can prevent SiGe growth on thebackside surface of the Si substrate 110 a. The patterned mask may beformed by, for example, depositing a dielectric material over thebackside surface of the Si substrate 110 a and also over the SiGe plugs180, followed by etching back the dielectric material such that upperportions of the SiGe plugs 180 protrude above the etched back dielectricmaterial. With the patterned mask in place, the SiGe caps 400 can beformed on the SiGe plugs 180 by using MOCVD, MBE, and/or other suitableepitaxial growth processes. The patterned mask is then removed from thebackside surface of the Si substrate 110 a after forming the SiGe caps400, leaving a gap between bottommost ends of the SiGe caps 400 and thebackside surface of the Si substrate 110 a. In that case, the SiGe caps400 are entirely separated from the Si substrate 110 a due to the gapleft by the pattern mask removal.

After formation of the sacrificial epitaxial caps 400 is complete, thesubstrate no is removed by using a selective etching process, thusleaving a gap G6 with high aspect ratio between the sacrificialhammer-shaped vias 409. The resulting structure is illustrated in FIG.28. For example, in some embodiments where the substrate no is Si andthe sacrificial hammer-shaped vias 409 are SiGe, the Si substrate 110 isremoved by using a selective etching process that etches Si at a fasteretch rate than it etches the SiGe via structures 409. In someembodiments, the selective etching process for selectively removing theSi substrate no may be a wet etching process using an wet etchingsolution such as tetramethylammonium hydroxide (TMAH), potassiumhydroxide (KOH), NH₄OH, the like or combinations thereof.

As a result of the selective etching process, the sacrificialhammer-shaped vias 409 protrude from backsides of the source epitaxialstructure 190S by a protruding height H6, and are separated from eachother by a lateral distance D6. By way of example and not limitation,the protruding height H6 of the sacrificial hammer-shaped vias 409 is ina range from about 40 nm to about 150 nm, and the lateral distance D6between the sacrificial hammer-shaped vias 409 is in a range from about20 nm to about 80 nm.

Next, as illustrated in FIG. 29, a backside ILD layer 410 is formed overthe sacrificial hammer-shaped vias 409, the source/drain epitaxialstructures 190S/190D, the replacement gate structures 220 and the innerspacers 170 by using suitable deposition techniques such as a conformdeposition technique like CVD. Depositing dielectric material into anarrow gap G6 (as indicated in FIG. 28) between the sacrificialhammer-shaped vias 409 results in one or more air gaps 412 (i.e., gapsfilled with air) in the resultant backside ILD layer 410 due to the highaspect ratio (i.e., the ratio of gap height (i.e., protruding height H6of sacrificial hammer-shaped vias 409) to gap width (i.e., lateraldistance D6 between the sacrificial hammer-shaped vias 409)) of the gapG6 between the sacrificial hammer-shaped vias 409. In greater detail,the gap G6 with high aspect ratio may result in overhangs formed in anupper portion of the G6 between the sacrificial hammer-shaped vias 409during the conformal deposition process, which in turn prevents thedielectric material 410 from completely filling the gap G6 between thesacrificial hammer-shaped vias 409, thus leaving one or more air gaps412 in the resultant backside ILD layer 410.

In some embodiments, the conformal deposition process for forming thebackside ILD layer 410 is plasma-free deposition, such as thermal CVD orthe like, which may help in overhang formation and hence air gapformation. In the depicted embodiment, the air gap 412 may have a widthdecreasing as a distance from the drain epitaxial structure 190Dincreases. However, it is noted that the shape shown in FIG. 29 isselected purely for demonstration purposes and are not intended to limitthe various embodiments of the present disclosure. For example, it iswithin the scope and spirit of the present disclosure for the air gap412 to comprise other shapes, such as, but no limited to rectangle,oval, square, trapezoidal, triangle and/or the like. In somaembodiments, the air gap 412 may overlap the drain epitaxial structure190D.

In some embodiments, the backside ILD layer 410 includes materials suchas tetraethylorthosilicate (TEOS) oxide, un-doped silicate glass, ordoped silicon oxide such as borophosphosilicate glass (BPSG), fusedsilica glass (FSG), phosphosilicate glass (PSG), boron doped siliconglass (BSG), and/or other suitable dielectric materials. In someembodiments, the backside ILD layer 410 has a same material as thefront-side ILD layer 210.

Once deposition of the backside ILD layer 410 is complete, the backsideILD layer 410 is thinned down until the sacrificial hammer-shaped vias409 become exposed. The thinning can be accomplished by an etch backprocess, a CMP process or the like. Take etch back process for example,because the sacrificial hammer-shaped vias 409 are formed of SiGe, whichis different from the dielectric material of the backside ILD layer 410,the etchant used in the etch back process can be selected in such a waythat the sacrificial hammer-shaped vias 409 have a slower etch rate thanthe backside ILD layer 410. In this way, the hammer-shaped vias 409 canact as a detectable etching end point, which in turn preventsover-etching the backside ILD layer 410, so that the air gap 412 remainssealed in the backside ILD layer 410 after the etch back process iscomplete.

In the depicted embodiment, the etch back process stops at a levelheight of the top horizontal facet 401 of the sacrificial epitaxial caps400 in order to lower risk that the air gap 412 might get exposed due toover-etching. However, in some other embodiments, the etch backtime/duration may be fine-tuned to stop at a slightly lower levelheight, such as at the level height 403 h between topmost and bottommostpositions of the vertical facet 403, so that the upper portions of thesacrificial epitaxial caps 400 may protrude from the backside ILD layer410, while the air gap 412 remains sealed after the etch back process iscomplete.

Next, the exposed sacrificial hammer-shaped vias 409 are removed to formbackside via openings O7 extending through the backside ILD layer 410 toexpose backsides of the source epitaxial structures 190S. The resultingstructure is illustrated in FIG. 31. The backside via openings O7 may behammer-shaped in a cross-sectional view, because they inherit geometryof the sacrificial hammer-shaped vias 409. In greater detail, thebackside via openings O7 each have a first portion O71 having a taperedprofile with a width decreasing as a distance from the source epitaxialstructure 190S increases; a second portion O72 over the first portionO71 and having a tapered profile with a width decreasing as a distancefrom the source epitaxial structure 190S decreases; a third portion O73over the second portion O72 and having vertical sidewalls and a widthkeeping uniform as a distance from the source epitaxial structure 190Sincreases; and a fourth portion O74 over the third portion O73 andhaving a tapered profile with a width decreasing as a distance from thesource epitaxial structure 190S increases.

In some embodiments where the previous etch back process performed onthe backside ILD layer 410 stops at the level height 403 h betweentopmost and bottommost positions of the vertical facet 403, the backsidevia openings O7 are free from the fourth tapered portions O74. In thatscenario, the top portions of the backside via openings O7 are the thirdportions O73 having vertical sidewalls and the largest widths, which inturn increases contact area for subsequently formed backside vias, thusreducing contact resistance and further reducing RC time delay.

Next, as illustrated in FIG. 32, source silicide regions 420 arerespectively formed on backsides of the source epitaxial structures 190Sby using a silicidation process, and then a metal material layer 430 isdeposited over the source silicide region 420. Formation methods andmaterials of the source silicide regions 420 and metal material layer430 are discussed previously with respect to the silicide regions 280and the metal material layer as illustrated in FIG. 23, and thus theyare not repeated herein for the sake of brevity.

The metal material layer 430 is then thinned down by using, e.g., CMP,until the backside ILD layer 410 is exposed. After the CMP process iscomplete, portions of the metal material layer 430 remain in therespective backside via openings O7 and serve as backside vias 432.Subsequently, a backside MLI structure 300 is formed over the backsidevias 432 and the backside ILD layer 410. The resulting structure isillustrated in FIG. 33. Exemplary details of the CMP process for formingthe backside vias 432 are discussed previously with respect to that forforming the backside vias 292 as illustrated in FIG. 24, and thus theyare not repeated herein for the sake of brevity. Exemplary formingmethods and materials of the backside MLI structure 300 are discussedpreviously with respect to FIG. 25, and thus they are not repeatedherein for the sake of brevity.

In the depicted embodiment of FIG. 33, the backside vias 432 each have afirst portion 4321 having a tapered profile with a width decreasing as adistance from the source epitaxial structure 190S increases; a secondportion 4322 over the first portion 4321 and having a tapered profilewith a width decreasing as a distance from the source epitaxialstructure 190S decreases; a third portion 4323 over the second portion4322 and having vertical sidewalls and a width keeping uniform as adistance from the source epitaxial structure 190S increases; and afourth portion 4324 over the third portion 4323 and having a taperedprofile with a width decreasing as a distance from the source epitaxialstructure 190S increases.

In some embodiments where the previous etch back process performed onthe backside ILD layer 410 stops at the level height 403 h betweentopmost and bottommost positions of the vertical facet 403 (See FIG.30), the backside vias 432 are free from the fourth tapered portions4324. In that scenario, the top portions of the backside vias 432 arethe third portions 4323 having vertical sidewalls and the largestwidths, which in turn increases contact area with the backside powerrail 305, thus reducing contact resistance and further reducing RC timedelay.

Based on the above discussions, it can be seen that the presentdisclosure offers advantages. It is understood, however, that otherembodiments may offer additional advantages, and not all advantages arenecessarily disclosed herein, and that no particular advantage isrequired for all embodiments. One advantage is that backside vias andbackside metal lines (e.g., backside power rails) can be formed on abackside of transistors, which in turn allows for more routing space andhence higher routing density. Another advantage is that one or morebackside dielectric layers laterally surrounding the backside viasand/or backside metal lines have one or more air gaps therein, which inturn reduces capacitive coupling among the backside vias and/or backsidemetal lines, thus resulting in reduced RC time delay.

In some embodiments, an integrated circuit (IC) structure includes agate structure, a source epitaxial structure, a drain epitaxialstructure, a front-side interconnection structure, a backside dielectriclayer, and a backside via. The source epitaxial structure and the drainepitaxial structure are respectively on opposite sides of the gatestructure. The front-side interconnection structure is on a front-sideof the source epitaxial structure and a front-side of the drainepitaxial structure. The backside dielectric layer is on a backside ofthe source epitaxial structure and a backside of the drain epitaxialstructure and has an air gap therein. The backside via extends throughthe backside dielectric layer to a first one of the source epitaxialstructure and the drain epitaxial structure.

In some embodiments, an IC structure includes a plurality of firstchannel layers, a plurality of second channel layers, a first gatestructure, a second gate structure, first and second source epitaxialstructures, a drain epitaxial structure, front-side interconnectionstructure, first and second backside vias, and a dielectric layer. Theplurality of first channel layers are arranged one above another in aspaced apart manner, and the plurality of second channel layers arrangedon above another in a spaced apart manner as well. The first gatestructure surrounds each of the plurality of first channel layers, and asecond gate structure surrounds each of the plurality of second channellayers. The first source epitaxial structure and the drain epitaxialstructure are respectively on opposite end surfaces of the plurality offirst channel layers. The second source epitaxial structure and thedrain epitaxial structure are respectively on opposite end surfaces ofthe plurality of second channel layers. The front-side interconnectionstructure is on a front-side of the first source epitaxial structure, afront-side of the drain epitaxial structure and a front-side of thesecond source epitaxial structure. The first backside via and the secondbackside via are respectively on a backside of the first sourceepitaxial structure and a backside of the second source epitaxialstructure. The dielectric layer laterally surrounds the first backsidevia and the second backside via and has an air gap laterally between thefirst backside via and the second backside via.

In some embodiments, a method includes etching a recess in a substrate;forming a sacrificial epitaxial plug in the recess in the substrate;forming a source epitaxial structure and a drain epitaxial structureover the substrate, wherein one of the source epitaxial structure andthe drain epitaxial structure is formed over the sacrificial plug;forming a gate structure laterally between the source epitaxialstructure and the drain epitaxial structure; removing the substrate suchthat the sacrificial epitaxial plug protrudes from a backside of the oneof the source epitaxial structure and the drain epitaxial structure;forming a dielectric layer over the sacrificial epitaxial plug, thedielectric layer having an air gap therein; removing the sacrificialepitaxial plug to form a backside via opening extending through thedielectric layer; and forming a backside via in the backside viaopening.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit (IC) structure comprising:a gate structure; a source epitaxial structure and a drain epitaxialstructure respectively on opposite sides of the gate structure; afront-side interconnection structure on a front-side of the sourceepitaxial structure and a front-side of the drain epitaxial structure; abackside dielectric layer on a backside of the source epitaxialstructure and a backside of the drain epitaxial structure and having anair gap therein, wherein the backside dielectric layer extendscontinuously from under the source epitaxial structure to under thedrain epitaxial structure; and a backside via extending through thebackside dielectric layer to a first one of the source epitaxialstructure and the drain epitaxial structure.
 2. The IC structure ofclaim 1, wherein the air gap has a width decreasing as a distance fromthe front-side interconnection structure increases.
 3. The IC structureof claim 1, wherein the air gap overlaps a second one of the sourceepitaxial structure and the drain epitaxial structure.
 4. The ICstructure of claim 1, wherein the backside via has a tapered profilewith a width decreasing as a distance from the front-sideinterconnection structure increases.
 5. The IC structure of claim 1,wherein the backside via comprises a first portion over the first one ofthe source epitaxial structure and the drain epitaxial structure, and asecond portion over the first portion, the first portion has a widthdecreasing as a distance from the front-side interconnection structureincreases, and the second portion has a width increasing as a distancefrom the front-side interconnection structure increases.
 6. The ICstructure of claim 5, wherein the backside via further comprises a thirdportion over the second portion, and the third portion has a uniformwidth as a distance from the front-side interconnect structureincreases.
 7. The IC structure of claim 6, wherein the backside viafurther comprises a fourth portion over the third portion, and thefourth portion has a width decreasing as a distance from the front-sideinterconnection structure increases.
 8. The IC structure of claim 1,wherein the first one of the source epitaxial structure and the drainepitaxial structure is the source epitaxial structure.
 9. The ICstructure of claim 1, wherein a second one of the source epitaxialstructure and the drain epitaxial structure is free of a backside viaextending in the backside dielectric layer.
 10. The IC structure ofclaim 9, wherein the second one of the source epitaxial structure andthe drain epitaxial structure is the drain epitaxial structure.
 11. TheIC structure of claim 1, further comprising: a back-side interconnectionstructure on a backside of the backside dielectric layer.
 12. Anintegrated circuit (IC) structure comprising: a plurality of firstchannel layers arranged one above another in a spaced apart manner, anda plurality of second channel layers arranged one above another in aspaced apart manner; a first gate structure surrounding each of theplurality of first channel layers, and a second gate structuresurrounding each of the plurality of second channel layers; a firstsource epitaxial structure and a drain epitaxial structure respectivelyon opposite end surfaces of the plurality of first channel layers; asecond source epitaxial structure and the drain epitaxial structurerespectively on opposite end surfaces of the plurality of second channellayers; a front-side interconnection structure on a front-side of thefirst source epitaxial structure, a front-side of the drain epitaxialstructure and a front-side of the second source epitaxial structure; afirst backside via and a second backside via respectively on a backsideof the first source epitaxial structure and a backside of the secondsource epitaxial structure; and a dielectric layer laterally surroundingthe first backside via and the second backside via, the dielectric layerhaving an air gap laterally between the first backside via and thesecond backside via.
 13. The IC structure of claim 12, furthercomprising: silicide regions on the backside of the first sourceepitaxial structure and the backside of the second source epitaxialstructure, respectively.
 14. The IC structure of claim 13, wherein abackside of the drain epitaxial structure is free of a silicide region.15. The IC structure of claim 12, wherein the air gap overlaps the drainepitaxial structure.
 16. The IC structure of claim 15, wherein the airgap has a width decreasing as a distance from the drain epitaxialstructure increases.
 17. A method of forming a semiconductor device, themethod comprising: etching a recess in a substrate; forming asacrificial epitaxial plug in the recess in the substrate; forming asource epitaxial structure and a drain epitaxial structure over thesubstrate, wherein one of the source epitaxial structure and the drainepitaxial structure is formed over the sacrificial epitaxial plug;forming a gate structure laterally between the source epitaxialstructure and the drain epitaxial structure; removing at least a portionof the substrate such that the sacrificial epitaxial plug protrudes froma backside of the one of the source epitaxial structure and the drainepitaxial structure; forming a dielectric layer over the sacrificialepitaxial plug, the dielectric layer having an air gap therein; removingthe sacrificial epitaxial plug to form a backside via opening extendingthrough the dielectric layer; and forming a backside via in the backsidevia opening.
 18. The method of claim 17, wherein forming the sacrificialepitaxial plug is performed such that a first silicon germanium layer isformed in a lower portion of the recess in the substrate and a secondsilicon germanium layer formed in an upper portion of the recess in thesubstrate, and the second silicon germanium layer has a lower germaniumatomic percentage than the first silicon germanium layer.
 19. The methodof claim 18, wherein removing the sacrificial epitaxial plug isperformed using a selective etching process that etches the firstsilicon germanium layer at a faster etch rate than etching the secondsilicon germanium layer.
 20. The method of claim 17, wherein an overhangis formed on an upper portion of the sacrificial epitaxial plug duringforming the dielectric layer.